di gital transistors (built-in resistors) dtc143tm/dtc143te/dtc143tua equivalent circuit dtc143tka /DTC143TSA/ dtc143tca digital transistor (npn) features 1. built-in bias resistors enable the configuration of an inverter circui t without connecting external input resistors(see equivalent circuit) 2. the bias resistors consist of thin-film resistors with complete isolat ion to allow negative biasing of the input.they also have the advantage of almost completely eliminating parasitic effects 3. only the on/off conditions need to be set for operation, making device design easy pin connenctions and marking (1) base (2) emitter (3) collector (1) base (2) emitter (3) collector addreviated symbol: 03 sot-523 addreviated symbol: 03 sot-23-3l sot-23 sot-323 to-92s dtc143te dtc143tua dta114eca dtc143tca dtc143tka DTC143TSA addreviated symbol: 03 addreviated symbol: 03 (1) base (2) emitter (3) collector sot- 723 dta114e m dtc143t m addreviated symbol: 03 a,jun ,2011 tiger electronic co.,ltd
electrical characteristics (ta=25 ) parameter sym bol min typ max unit conditions collector-base breakdown voltage v (br)cbo 50 v ic=50a collector-emitter breakdown voltage v (br)ceo 50 v ic=1ma emitter-base breakdown voltage v (br)ebo 5 v i e =50a collector cut-off current i cbo 0.5 a v cb =50v emitter cut-off current i ebo 0.5 a v eb =4v collector-emitter saturation voltage v ce(sat) 0.3 v i c =5ma,i b =0.25ma dc current transfer ratio h fe 100 600 v ce =5v,i c =1ma input resistance r 1 3.29 4.7 6.11 k ? transition frequency f t 250 mhz v o =10v ,i o =5ma,f=100mhz absolute maximum ratings(ta=25 ) parameter symbol limits (dtc143 t ) unit m e ua ca ka sa collector-base voltage v (br)cbo 50 v collector-emitter voltage v (br)ceo 50 v emitter-base voltage v (br)ebo 5 v collector current i c 100 ma collector power dissipation p c 100 150 200 300 mw junction temperature tj 150 storage temperature tstg -55~150 $ - x q
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